| PART |
Description |
Maker |
| 50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
|
| IS45S16100C1-7TA1 IS45S16100C1-7TLA1 IS45S16100C1- |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
| IS42VS16100C1-10T IS42VS16100C1-10TI IS42VS16100C1 |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IC42S32200L IC42S32200 IC42S32200_L-6B IC42S32200_ |
512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Circuit Systems
ICSI
|
| IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42 |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
|
| IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
|
| IS45S32200C1-7TLA IS45S32200C1-7TLA1 IS45S32200C1 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42S32200E-6TL IS42S32200E-6TLI IS45S32200E-6BLA1 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc
|
| EBD11ED8ABFB-7B EBD11ED8ABFB EBD11ED8ABFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 72 bits/ 2 Banks)
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 】 72 bits, 2 Banks)
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words × 72 bits, 2 Banks)
|
ELPIDA[Elpida Memory]
|
| EBD11ED8ABFB-6B EBD11ED8ABFB-7B EBD11ED8ABFB-7A |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words ?72 bits, 2 Banks)
|
Elpida Memory
|
| LC331632M-10 LC331632M-12 LC331632M-70 LC331632M-8 |
512K (32768 words X 16 bits) Pseudo-SRAM
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| W9816G6CH W9816G6CH-5 W9816G6CH-6 W9816G6CH-7 |
512K × 2 BANKS × 16 BITS SDRAM
|
Winbond
|
